Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes.
DetailsWe report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the ...
DetailsThis letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge …
DetailsHere we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. ... and has the potential to be integrated ...
DetailsThis paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The …
DetailsIn this paper, we demonstrate two novel devices using RMG germanium integrated on silicon photonics. The first is a 4 fF PIN photodiode with 6 nA of dark current and 0.95 A/W responsivity at 1550 nm. By varying the width of the intrinsic region we were able to measure 3 dB frequencies well over 40 GHz.
DetailsWaveguide photodetectors integrated on silicon for the chip to chip connection were realized with SiGe superlattice structures in a p–i–n diode [6], [7]. Another approach used poly germanium for a near infrared waveguide photodetector [8]. We report of the MBE growth of a p–i–n detector with single crystalline germanium integrated on ...
DetailsMost, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on Nb operated at a temperature < 4 K. This paper proposes and analyzes 300 K Si-waveguide-integrated GeSi single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi …
DetailsA compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 μm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 μm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the …
DetailsModifications to the current design are suggested such that integrated germanium p-i-n detectors, directly grown on silicon waveguides would be suitable for high-bandwidth photo-detection up to at least a wavelength of 2000 nm. A Separate-Absorption-Charge-Multiplication Avalanche Photo-Detector is fabricated exploiting the same indirect ...
DetailsAs we all know, both Silicon and Germanium are semiconductor devices. But the present trend is to use Silicon instead of Germanium. What may be the reasons? Although both silicon and germanium are used in semiconductor devices, the present day trend is to use silicon. The main reasons for this are : (i) Smaller ICBO. At room …
DetailsThis paper presents a front-end switch that integrates the ability to provide both loop-back testing and transmit-receive operation. In addition, power detectors are integrated with capacitive couplers to sense the power levels at the transmitter output and the receiver input. The measured results show the power detectors have constant responsivity and …
DetailsGOING et al.: GERMANIUM GATE PHOTOMOSFET INTEGRATED TO SILICON PHOTONICS 8201607 device at a frequency, ν, and I s is the diode leakage current. V Photo= nkT q ln P inc I s ηq hν. (1) Much like the subthreshold slope of a MOSFET, in this de-vice, the additional gate voltage induced by light absorption
DetailsSemiconductors, sometimes referred to as integrated circuits (ICs) or microchips, are made from pure elements, typically silicon or germanium, or compounds such as gallium arsenide. In a process called doping, small amounts of impurities are added to these pure elements, causing large changes in the conductivity of the material.
DetailsA compact pin Ge photodetector is integrated in submicron SOI rib waveguide using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt …
DetailsTransistors that use a combination of silicon and germanium in the channel can reportedly be found in some recent chips, and they made an appearance in a 2015 demonstration …
DetailsSilicon photonics, known more accurately as group IV photonics, describes optoelectronics devices made from silicon (Si) and germanium (Ge). In recent years, the wavelength …
DetailsThis chapter reviews recent advances in monolithically integrated silicon-germanium optical photodetectors. The chapter traces the progress and development in optical photodetectors based on two dominant group-IV elemental semiconductors, silicon, and germanium, including material processing, integration, and a variety of …
DetailsVertically integrated silicon-germanium nanowire field-effect transistor G. Rosaz; G. Rosaz 1. Laboratoire des Technologies de la Microélectronique (LTM)–UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, F-38054 Grenoble, France. 2. CEA Grenoble, INAC/SP2M/SiNaPS
DetailsThis chapter reviews the properties of silicon-germanium, beginning with the electronic properties and then progressing to the optical properties. The growth of silicon …
DetailsDevices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration …
Details* Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed ...
DetailsModifications to the current design are suggested such that integrated germanium p-i-n detectors, directly grown on silicon waveguides would be suitable for high-bandwidth photo-detection up to at least a wavelength of 2000 nm. A Separate-Absorption-Charge-Multiplication Avalanche Photo-Detector is fabricated exploiting the …
DetailsMultiplexing photonic devices integrated on a silicon/germanium platform for mid-infrared gas sensing Abstract: This paper presents infrared photonic multiplexers integrated on silicon designed to be assembled with QCL or ICL arrays in order to realize different possible broadband powerful tunable sources in the mid-infrared for multi-gas sensing.
DetailsAbstract: The effects of 14-MeV neutron displacement damage (DD) on waveguide (WG)-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to the fluences of 7.5 × 10 12 n/cm 2 (14 MeV) or 1.4 × 10 13 n 1-MeV eq /cm 2 (Si). This article includes the measurements of dark current …
DetailsThe demonstration of a germanium-based photodiode with a 3 dB bandwidth of 265 GHz and compatibility with silicon photonics and CMOS fabrication offers a cost-effective route to faster channel ...
DetailsThis letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 μm × 2 μm, low standby current (0.5 μA at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge …
DetailsWe report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the operating wavelength of 4.18 µm.Considering the combined waveguide propagation losses and bending losses, which are measured to be below 0.2 …
DetailsHigh-speed 10–40 Gb/s synchronous optical network (SONET) transceivers, wireless LAN chipsets, and GSM and CDMA wireless handsets and base stations all contain …
DetailsA compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse …
DetailsRecess-type waveguide integrated germanium on silicon avalanche photodiode Abstract: We demonstrate a recess-type Ge on Si WGAPD receiver with 106Gb/s PAM4 overload >0dBm and unstressed/stressed sensitivities of -18.9/18dBm, which provides about 19dB dynamic range for 100Gb/s per lane applications.
Details42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide Laurent Vivien 1, Johann Osmond 1, Jean-Marc Fédéli 2, Delphine Marris-Morini 1, Paul Crozat 1, Jean-François Damlencourt 2, Eric Cassan 1, Y.Lecunff 2, Suzanne Laval 1 1 Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Bât. 220, Université Paris …
DetailsMost, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on Nb operated at a temperature<4 K. This paper proposes and analyzes 300 K Si-waveguide-integrated GeSi single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs …
DetailsSilicon germanium (SiGe) is now a popular semiconductor that has skyrocketed in its production since the 90s. But this semiconductor didn't rise to success overnight. ... Maxim Integrated illustrates this point in an article on how SiGe technology enhances RF front-end performance.
DetailsPE series jaw crusher is usually used as primary crusher in quarry production lines, mineral ore crushing plants and powder making plants.
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